Power Switching with Mitsubishi’s QM200DY-HB Module
2025-04-04 46

The QM200DY-HB, developed by Mitsubishi Electric Semiconductor, is a top-notch component for handling large amounts of power efficiently. This article breaks down everything about the QM200DY-HB, including its design, specifications, features, and various uses in industries like renewable energy and automation. It's perfect for those in manufacturing and supply looking for dependable, high-quality solutions for complex power needs.

Catalog

Introduction of QM200DY-HB

The QM200DY-HB, crafted by Mitsubishi Electric Semiconductor, is an advanced high-power insulated-gate bipolar transistor (IGBT) module tailored for demanding high-power switching applications. This module showcases a robust insulated design, ensuring reliability and efficiency in high-stress environments. It is characterized by a substantial collector current rating of 200A and a collector-emitter voltage of 600V, making it ideal for a variety of industrial applications, including motor drives and power inverters.

To enhance your systems with reliable and high-performance components, consider the QM200DY-HB as an excellent solution. Place your bulk orders now to take advantage of competitive pricing and ensure product availability.

QM200DY-HB Circuit Diagram

The circuit diagram of the Mitsubishi QM200DY-HB module illustrates a dual IGBT configuration, commonly used in high-power applications such as inverters and motor drives. Each half of the module consists of an IGBT transistor paired with a freewheeling diode, forming a half-bridge configuration. The two IGBTs are marked with control terminals B1/B1X and B2/B2X for gate drive and C1/E1 and C2/E2 for the collector and emitter terminals respectively. The central node labeled E2 connects the emitters of both IGBTs, acting as a shared point that allows the device to be used in half-bridge or full-bridge arrangements.

Technical Details of QM200DY-HB

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
Symbol	Parameter	Conditions	Ratings	Unit
VCEX (SUS)	Collector-emitter voltage	IC = 1A, VBE = 2V	600	V
VCEX	Collector-emitter voltage	VEB = 2V	600	V
VCBO	Collector-base voltage	Emitter open	600	V
VEBO	Emitter-base voltage	Collector open	7	V
IC	Collector current	DC	200	A
–IC	Collector reverse current	DC (forward diode current)	200	A
PC	Collector dissipation	TC = 25°C	1240	W
IB	Base current	-	12	A
–ICSM	Surge collector reverse current	Peak value of one cycle of 60Hz (half wave)	2000	A
Tj	Junction temperature	-	–40 ~ +150	°C
Tstg	Storage temperature	-	–40 ~ +125	°C
Viso	Isolation voltage	Charged part to case, AC for 1 minute	2500	V
—	Mounting torque (Main terminal screw M6)		1.96 ~ 2.94	N·m
—	Mounting torque (Mounting screw M6)		20 ~ 30	kg·cm
—	Weight (Typical value)		470	g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
ICEX	Collector cutoff current	VCE = 600V, VEB = 2V	—	—	4	mA
ICBO	Collector cutoff current	VCB = 600V, Emitter open	—	—	4	mA
IEBO	Emitter cutoff current	VEB = 7V	—	—	200	mA
VCE(sat)	Collector-emitter saturation voltage	IC = 200A, IB = 260A	—	—	2.5	V
VBE(sat)	Base-emitter saturation voltage		—	—	3	V
–VCE0	Collector-emitter reverse voltage	–IC = 200A (diode forward voltage)	—	—	1.8	V
hFE	DC current gain	IC = 200A, VCE = 2.5V	750	—	—	—
ton	Switching time (turn-on)	VCC = 300V, IC = 200A, IB1 = 400mA, –IB2 = 4A	—	—	2.5	µs
ts	Switching time (storage time)	Same as above	—	—	10	µs
tf	Switching time (fall time)	Same as above	—	—	2	µs
Rth(j-c) Q	Thermal resistance (junction to case)	Transistor part (per 1/2 module)	—	—	0.1	°C/W
Rth(j-c) R	Thermal resistance (junction to case)	Diode part (per 1/2 module)	—	—	0.33	°C/W
Rth(c-f)	Contact thermal resistance (case to fin)	Conductive grease applied (per 1/2 module)	—	—	0.075	°C/W

QM200DY-HB Core Features

Dual IGBT Module Configuration

The QM200DY-HB contains two IGBT (Insulated Gate Bipolar Transistor) chips in a single package. These are configured in a half-bridge arrangement, making the module ideal for use in inverter circuits, motor drives, and other high-speed switching applications.

High Current and Voltage Ratings

This module is rated for a collector current of 200A and a collector-emitter voltage of 600V. These ratings enable it to handle significant power loads, making it suitable for industrial-grade applications.

Built-in Freewheeling Diodes

Each IGBT in the module is paired with a fast-recovery freewheeling diode. These diodes help to manage the inductive load energy and reduce voltage spikes during switching, thus improving system efficiency and protecting other components.

Isolated Baseplate for Easy Mounting

The baseplate of the QM200DY-HB is electrically isolated from the internal circuitry, allowing for flexible mounting and simplified heat sink design without additional insulation.

Integrated Gate Resistors and Protection Elements

The internal circuit includes gate resistors and protection components such as clamping diodes. These elements enhance switching performance, reduce gate drive complexity, and help protect the IGBT chips from damage due to overvoltage or transient spikes.

UL Recognized Design

The module is UL Recognized (Yellow Card No. E80276), ensuring compliance with safety standards and making it easier to certify end-use equipment for regulatory approvals.

Main Applications of QM200DY-HB

Inverter Circuits

The half-bridge configuration and high current capacity make the QM200DY-HB ideal for inverter circuits used in renewable energy systems such as solar and wind power, where efficient DC to AC conversion is critical.

Motor Drives and Servo Control

This module is widely used in industrial motor drive systems and servo controllers, where precise speed and torque control are needed. Its fast switching and built-in protection features support reliable operation in demanding environments.

Uninterruptible Power Supplies (UPS)

In UPS systems, the QM200DY-HB ensures efficient power switching and backup supply during outages, helping maintain uninterrupted service for sensitive electronics and critical systems.

Welding Equipment

Due to its ability to handle high current loads and fast switching speeds, the module is suitable for use in welding machines where precise energy control and thermal management are essential.

CNC and Industrial Automation

The module is also applicable in computer numerical control (CNC) machinery and automated production equipment, where high-speed switching and rugged reliability are required for continuous operation.

Example of QM200DY-HB Performance Curves

The performance curves of the QM200DY-HB module provide valuable insights into its switching and conduction behavior under various conditions. The Common Emitter Output Characteristics graph (top-left) shows the relationship between collector current (I_C) and collector-emitter voltage (V_CE) for different base currents (I_B). It illustrates that as IB increases, the device can drive higher collector currents, which is typical behavior for IGBTs.

In the DC Current Gain vs. Collector Current graph (top-right), the module's current gain (h_FE) is plotted against I_C at different V_CE values and junction temperatures (T_J). The gain increases with I_C up to a peak point, then decreases due to device limitations. Higher V_CE values and elevated temperatures generally reduce current gain, indicating thermal sensitivity in high-load conditions.

The Common Emitter Input Characteristic (bottom-left) curve highlights how base current varies with base-emitter voltage (V_BE). It shows a steep rise in IB beyond approximately 2.6V, emphasizing the importance of precise gate drive control to ensure efficient switching.

Lastly, the Saturation Voltage Characteristics graph (bottom-right) presents V_CE(sat) and V_BE(sat) as functions of collector current. It shows that both voltages increase with load and temperature, which results in higher conduction losses at elevated current levels.

Storage and ESD Precautions for QM200DY-HB

Proper Storage Environment

To maintain the integrity and longevity of the QM200DY-HB, it should be stored in a dry, clean, and temperature-controlled environment. Recommended storage conditions include a temperature range of 5°C to 35°C and humidity levels below 60% RH. Avoid exposure to corrosive gases, dust, or direct sunlight.

Moisture Sensitivity

Like many semiconductor modules, the QM200DY-HB may be sensitive to moisture. Prolonged exposure to high humidity can lead to oxidation of terminals or internal degradation. It’s best to store the module in sealed anti-static bags with desiccants and humidity indicators.

Electrostatic Discharge (ESD) Handling

The QM200DY-HB contains sensitive semiconductor elements that are vulnerable to electrostatic discharge. Always use ESD-safe workstations, wrist straps, and grounded tools when handling the module. Avoid touching pins and terminals directly.

Safe Transportation

During transportation, ensure the module is protected from mechanical shock, vibration, and static electricity. Use original packaging or equivalent ESD-safe containers to prevent physical or electrical damage.

Handling Precautions

When installing or removing the module, ensure the power supply is off and fully discharged. Avoid applying force directly to the terminals or the case, and never drop the module, as internal components may be damaged even if no external signs are visible.

Alternative Parts for QM200DY-HB

• 2MBI200N-060

• SKM200GB123D

• IRG4PH50U

• STG200NB60

• FGL40N120AND

QM200DY-HB Manufacturer Details

Mitsubishi Electric is a globally recognized leader in power semiconductor manufacturing, known for its advanced technology and reliability. In producing the QM200DY-HB, Mitsubishi leverages precision engineering, high-quality materials, and rigorous testing to ensure optimal performance in demanding industrial environments. This makes the QM200DY-HB a trusted choice for high-power switching applications.

QM200DY-HB Outline Drawing

The outline drawing of the QM200DY-HB module provides the physical layout and dimensions necessary for accurate mechanical integration into electronic systems. The module has a rectangular footprint measuring 108 mm in length and 62 mm in width, with mounting holes (Ø6.5 mm) placed at the corners for secure attachment using M6 screws. The top view indicates the placement of key electrical terminals, such as B1X, B2X, C1, C2E1, E1, and E2, spaced for easy connection and proper thermal management. The side view shows the height profile, with a maximum height of 30 mm and pin layout that includes standard tab connectors (Tab #110, thickness 0.5 mm) spaced for compatibility with bus bars or wiring harnesses.

Conclusion

The QM200DY-HB is essential for anyone needing powerful and reliable technology. We've covered its design, benefits, and the wide range of applications it supports. This IGBT module is an excellent investment. We invite you to take advantage of the superior quality and performance of the QM200DY-HB by placing bulk orders now. Boost your operations and stay ahead in the high-power electronics market with this dependable module.

Datasheet PDF

QM200DY-HB Datasheet:

QM200DY-HB Details PDF

QM200DY-HB PDF - DE.pdf

QM200DY-HB PDF - FR.pdf

QM200DY-HB PDF - ES.pdf

QM200DY-HB PDF - KR.pdf